4.1.3 Plated Metallisation for Silicon Tandem Cells
Prof. Anita Ho-Baillie, A/Prof. Ned Ekins-Daukes, Dr Heping Shen
• Investigate processes and optimal interface layers required for copper-plated GaAs top cells
• Develop new processes to replace photolithography for the fabrication of metal contacts on GaAs top cells of silicon tandem devices.
• Demonstrate 45% CPV efficiency on commercial epitaxial wafers, 50% CPV solar cell efficiency on research lab scale devices.
• Development scalable, low-cost metallisation for tandem solar cells